This is the development sandbox for the DRV425EVM and its magnetic sensing.
Dependencies: mbed
Repository for the 2015 OhmBoyZ Capstone group.
Diff: main.cpp
- Revision:
- 16:65b7b24fe260
- Parent:
- 15:478a1f3ad7c2
- Child:
- 17:9af7969cd74e
--- a/main.cpp Tue Dec 08 02:59:10 2015 +0000 +++ b/main.cpp Tue Dec 08 03:39:41 2015 +0000 @@ -11,15 +11,15 @@ printf("\n\rAnalogIn example\n\r"); while(1) { meas = analog_value.read(); // Converts and read the analog input value (value from 0.0 to 1.0) - meas *= 3.3; // Change the value to be in the 0 to 3.3 range (currently to mV) + meas *= 3.3; // Change the value to be in the 0 to 3.3 range (currently to V) printf("meas = %fmV\n\r",meas*1000); // Print out raw measurement in terms of mV - b=(meas-(3.3/2.0))/(4.0*12.2*100.0); // Based on equation 1 from DRV425EVM pdf - //VVOUT [V] = B × G × RSHUNT × GAMP = B [uT] × 12.2 mA/mT × RSHUNT [Ω] × 4 [V/V] + b=(meas-(3.3/2.0))/(4.0*12.2*100.0); // Based on equation 1 from DRV425EVM pdf (in T) + //VVOUT [V] = B × G × RSHUNT × GAMP = B [mT] × 12.2 mA/mT × RSHUNT [Ω] × 4 [V/V] //VVOUT is with reference to REFIN // 0 Tesla is VDD/2 // 12.2 mA/mT - printf("b = %fuT\n\r",b*1000.0); // Print out b field measure in micro-Tesla - printf("b = %f Gauss\n\r", b/100000.0); // Output B field in Gauss + printf("b = %fuT\n\r",b*1000000.0); // Print out b field measure in micro-Tesla + printf("b = %f Gauss\n\r", b*1000); // Output B field in Gauss if (meas > 1.65) { // If the value is greater than 1.65V then switch the LED on // positive magnetic field led = 1;